sep. 2001 CM400DU-24F c2e1 e2 c1 4- 6.5 mounting g2 e2 e1 g1 e2 c1 c2e1 rtc rtc tc measured point tc measured point circuit diagram holes 140 130 110 0.25 10 110 0.25 130 14.5 40 14.5 20.4 10 35 +1 -0.5 24.5 +1 -0.5 36 43.8 13.8 11.5 8 20 9 (26) (26) (26) (15) (15) 65 3-m8 nuts 4-m4 nuts g2 e2 e1 g1 application general purpose inverters & servo controlers, etc mitsubishi igbt modules CM400DU-24F high power switching use i c ................................................................... 400a v ces .......................................................... 1200v insulated type 2-elements in a pack outline drawing & circuit diagram dimensions in mm
sep. 2001 i c = 40ma, v ce = 10v i c = 400a, v ge = 15v v ce = 10v v ge = 0v 1200 20 400 800 400 800 1100 ?0 ~ +150 ?0 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 mitsubishi igbt modules CM400DU-24F high power switching use v v a a a a w c c v n ?m g 2 80 2.4 160 6.8 4.0 450 200 1000 300 550 3.2 0.11 0.13 0.045 *3 15 ma a nf nf nf nc ns ns ns ns ns c v c/w c/w c/w c/w ? 1.8 1.9 4400 23.6 0.010 3.1 6v v 57 collector cutoff current gate leakage current input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time reverse recovery time reverse recovery charge emitter-collector voltage contact thermal resistance thermal resistance external gate resistance gate-emitter threshold voltage collector-emitter saturation voltage thermal resistance *1 i ces i ges c ies c oes c res q g t d(on) t r t d(off) t f t rr ( note 1 ) q rr ( note 1 ) v ec( note 1 ) r th(j-c) q r th(j-c) r r th(c-f) r th(j-c? q r g symbol parameter v ge(th) v ce(sat) note 1. i e , v ec , t rr , q rr , die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (fwdi). 2. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 3. junction temperature (t j ) should not increase beyond 150 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. * 1 : tc measured point is indicated in outline drawing. * 2 : typical value is measured by using shin-etsu silicone ?-746? * 3 : if you use this value, r th(f-a) should be measured just under the chips. collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage torque strength weight g-e short c-e short t c = 25 c pulse (note 2) t c = 25 c pulse (note 2) t c = 25 c main terminal to base plate, ac 1 min. main terminal m8 mounting holes m6 g(e) terminal m4 typical value symbol parameter collector current emitter current conditions unit ratings v ces v ges i c i cm i e ( note 1 ) i em ( note 1 ) p c ( note 3 ) t j t stg v iso unit ty p. limits min. max. maximum ratings (tj = 25 c) electrical characteristics (tj = 25 c) test conditions v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 600v, i c = 400a, v ge = 15v v cc = 600v, i c = 400a v ge1 = v ge2 = 15v r g = 3.1 ? , inductive load switching operation i e = 400a i e = 400a, v ge = 0v igbt part (1/2 module) fwdi part (1/2 module) case to fin, thermal compound applied *2 (1/2 module) tc measured point is just under the chips
sep. 2001 mitsubishi igbt modules CM400DU-24F high power switching use 600 700 800 400 200 500 300 100 0 0 0.5 1 1.5 2 2.5 3 3.5 4 15 10 1 10 2 2 3 5 7 10 3 2 3 5 7 0 0.5 1 1.5 2 3.5 4 2.5 3 10 0 10 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 1 2 10 0 357 2 10 1 357 2 10 2 357 0.5 1 1.5 2 2.5 3 0 800 0 200 400 600 5 4 3 2 1 0 6 8 10 12 14 16 18 20 10 1 10 2 23 57 10 3 23 57 10 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 2 3 5 7 10 0 8.5 9.5 t j = 25 c t j = 125 c v ge = 15v t j = 25 c t d(off) t d(on) t f output characteristics (typical) collector current i c (a) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) gate-emitter voltage v ge (v) free-wheel diode forward characteristics (typical) emitter current i e (a) emitter-collector voltage v ec (v) capacitance? ce characteristics (typical) half-bridge switching characteristics (typical) capacitance c ies , c oes , c res (nf) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) switching times (ns) collector current i c (a) t r 10 9 8 v ge =20v t j =25 c 11 i c = 800a i c = 400a i c = 160a v ge = 0v c ies c oes c res conditions: v cc = 600v v ge = 15v r g = 3.1 ? t j = 125 c inductive load t j = 25 c performance curves
sep. 2001 mitsubishi igbt modules CM400DU-24F high power switching use 10 1 10 2 23 57 10 3 23 57 10 1 10 2 2 3 5 7 10 3 2 3 5 7 10 3 10 0 7 55 3 2 10 2 7 3 2 10 0 7 5 3 2 3 2 10 1 7 5 3 2 10 5 2357 2357 2357 2357 10 4 10 2 10 1 10 3 0 2 4 6 8 10 12 14 16 18 20 0 1000 2000 3000 4000 5000 6000 1 i rr t rr 10 1 10 0 10 1 23 57 23 57 v cc = 400v v cc = 600v i c = 400a reverse recovery characteristics of free-wheel diode (typical) emitter current i e (a) transient thermal impedance characteristics (igbt part & fwdi part) normalized transient thermal impedance z th (j c) ( c/w) tmie (s) gate charge characteristics (typical) gate-emitter voltage v ge (v) gate charge q g (nc) reverse recovery time t rr (ns) reverse recovery current l rr (a) single pulse t c = 25 c igbt part: per unit base = r th(j c) = 0.11 c/ w fwdi part: per unit base = r th(j c) = 0.13 c/ w conditions: v cc = 600v v ge = 15v r g = 3.1 ? t j = 25 c inductive load
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